Jiang, Huaxing : rechercher sur Z-Library

Journal of Electronic Materials

Année:

2015

Langue:

english

Fichier:

PDF, 2.38 MB

english, 2015

Optimization of a Common Buffer Platform for Monolithic Integration of InGaN/GaN Light-Emitting Diodes and AlGaN/GaN High-Electron-Mobility Transistors

Liu, Chao, Cai, Yuefei, Jiang, Huaxing, Lau, Kei May

Journal:

Année:

2016

Langue:

english

Fichier:

PDF, 2.39 MB

english, 2016

Off-state leakage current reduction in AlGaN/GaN high electron mobility transistors by combining surface treatment and post-gate annealing

Lu, Xing, Jiang, Huaxing, Liu, Chao, Zou, Xinbo, Lau, Kei May

Journal:

Semiconductor Science and Technology

Année:

2016

Langue:

english

Fichier:

PDF, 2.32 MB

english, 2016

Chemical Vapor Deposited Monolayer MoS2 Top-Gate MOSFET with Atomic-Layer-Deposited ZrO2 as Gate Dielectric

HU, Yaoqiao, Jiang, Huaxing, Lau, Kei May, Li, Qiang

Journal:

Semiconductor Science and Technology

Année:

2018

Langue:

english

Fichier:

PDF, 1.37 MB

english, 2018

Monolithic integration of III-nitride voltage-controlled light emitters with dual-wavelength photodiodes by selective-area epitaxy

Liu, Chao, Cai, Yuefei, Jiang, Huaxing, Lau, Kei May

Journal:

Optics Letters

Année:

2018

Langue:

english

Fichier:

PDF, 2.33 MB

english, 2018

[IEEE 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Chicago, IL (2018.5.13-2018.5.17)] 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Experimental characterization of the fully integrated Si-GaN cascoded FET

Ren, Jie, Tang, Chak Wah, Feng, Hao, Jiang, Huaxing, Yang, Wentao, Zhou, Xianda, Lau, Kei May, Sin, Johnny K. O.

Année:

2018

Langue:

english

Fichier:

PDF, 1.02 MB

english, 2018

Self-powered Fast-response X-ray Detectors Based on Vertical GaN p-n Diodes

Zhou, Leidang, Lu, Xing, Wu, Jin, Jiang, Huaxing, Chen, Liang, Ouyang, Xiaoping, Lau, Kei May

Journal:

Année:

2019

Langue:

english

Fichier:

PDF, 665 KB

english, 2019

1-kV sputtered p-NiO/n-Ga2O3 heterojunction diodes with an ultra-low leakage current below 1 μA/cm2

Lu, Xing, Zhou, Xianda, Jiang, Huaxing, Ng, Kar Wei, Chen, Zimin, Pei, Yanli, Lau, Kei May, Wang, Gang

Journal:

Année:

2020

Langue:

english

Fichier:

PDF, 788 KB

english, 2020

Leakage Current Reduction in Î²-Ga2O3 Schottky Barrier Diodes by CF4 Plasma Treatment

Luo, Haoxun, Jiang, Huaxing, Chen, Zimin, Pei, Yanli, Feng, Qian, Zhou, Hong, Lu, Xing, Lau, Kei May, Wang, Gang

Journal:

Chemistry - A European Journal

Année:

2020

Fichier:

PDF, 696 KB

2020

Restructuring-Induced Activity of SiO2-Supported Large Au Nanoparticles in Low-Temperature CO Oxidation

Kun Qian, Huaxing Sun, Weixin Huang, Jun Fang, Shanshan Lv, Bo He, Zhiquan Jiang, Shiqiang Wei

Journal:

Année:

2008

Langue:

english

Fichier:

PDF, 450 KB

english, 2008

[IEEE 2012 International Conference on Information and Automation (ICIA) - Shenyang, China (2012.06.6-2012.06.8)] 2012 IEEE International Conference on Information and Automation - 3D reconstruction based on digital speckle correlation in virtual sport

Ruan, Chuanyang, Jiang, Jun, Deng, Feiqi, Cheng, Jun, Qian, Huaxing

Année:

2012

Langue:

english

Fichier:

PDF, 971 KB

english, 2012

Anchoring highly active gold nanoparticles on SiO2 by CoOx additive

Kun Qian, Weixin Huang, Zhiquan Jiang, Huaxing Sun

Journal:

Journal of Catalysis

Année:

2007

Langue:

english

Fichier:

PDF, 416 KB

english, 2007

Hydroxyls-induced oxygen activation on “inert” Au nanoparticles for low-temperature CO oxidation

Kun Qian, Wenhua Zhang, Huaxing Sun, Jun Fang, Bo He, Yunsheng Ma, Zhiquan Jiang, Shiqiang Wei, Jinlong Yang, Weixin Huang

Journal:

Journal of Catalysis

Année:

2011

Langue:

english

Fichier:

PDF, 1.90 MB

english, 2011

The comparative studies of the influences of Urapidil and Nicardipine on sino-atrial node function, atrio-ventricular node function and hemodynamics

Jingming Zhu, Ningning Hui, Xiuhong Jiang, Huaxing Zhang, Chengzhang Fu

Journal:

Journal of Nanjing Medical University

Année:

2007

Langue:

english

Fichier:

PDF, 108 KB

english, 2007

An improved EEMD with multiwavelet packet for rotating machinery multi-fault diagnosis

Jiang, Hongkai, Li, Chengliang, Li, Huaxing

Journal:

Mechanical Systems and Signal Processing

Année:

2013

Langue:

english

Fichier:

PDF, 1.25 MB

english, 2013

Improved Bioproduction of Short-Chain Fatty Acids (SCFAs) from Excess Sludge under Alkaline Conditions

Yuan, Hongying, Chen, Yinguang, Zhang, Huaxing, Jiang, Su, Zhou, Qi, Gu, Guowei

Journal:

Environmental Science & Technology

Année:

2006

Langue:

english

Fichier:

PDF, 160 KB

english, 2006

In situ growth of SiN x as gate dielectric and surface passivation for AlN/GaN heterostructures by metalorganic chemical vapor deposition

Ma, Jun, Lu, Xing, Jiang, Huaxing, Liu, Chao, Lau, Kei May

Journal:

Applied Physics Express

Année:

2014

Langue:

english

Fichier:

PDF, 3.28 MB

english, 2014

MOVPE growth of in situ SiNx/AlN/GaN MISHEMTs with low leakage current and high on/off current ratio

Ma, Jun, Lu, Xing, Zhu, Xueliang, Huang, Tongde, Jiang, Huaxing, Xu, Peiqiang, Lau, Kei May

Journal:

Journal of Crystal Growth

Année:

2015

Langue:

english

Fichier:

PDF, 1.36 MB

english, 2015

Low trap states in in situ SiNx/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition

Lu, Xing, Ma, Jun, Jiang, Huaxing, Liu, Chao, Lau, Kei May

Journal:

Journal of Applied Physics

Année:

2014

Langue:

english

Fichier:

PDF, 1.34 MB

english, 2014

Structural and electronic properties of cubic boron nitride doped with zinc

Li, Yubo, Cheng, Tianyuan, Wang, Xiao, Jiang, Huaxing, Yang, Hangsheng, Nose, Kenji

Journal:

Année:

2014

Langue:

english

Fichier:

PDF, 1.32 MB

english, 2014

Characterization of in situ SiNx thin film grown on AlN/GaN heterostructure by metal-organic chemical vapor deposition

Lu, Xing, Ma, Jun, Jiang, Huaxing, May Lau, Kei

Journal:

physica status solidi (a)

Année:

2014

Langue:

english

Fichier:

PDF, 1.02 MB

english, 2014

In situ SiN x gate dielectric by MOCVD for low-leakage-current ultra-thin-barrier AlN/GaN MISHEMTs on Si

Lu, Xing, Ma, Jun, Liu, Zhaojun, Jiang, Huaxing, Huang, Tongde, Lau, Kei May

Journal:

Année:

2014

Langue:

english

Fichier:

PDF, 547 KB

english, 2014

SPIE Proceedings [SPIE Asia Pacific Optical Sensors Conference 2013 - Wuhan, China (Tuesday 15 October 2013)] Fourth Asia Pacific Optical Sensors Conference - Spectral characteristics of long-period chiral fiber gratings fabricated by stepping system

Yang, Minghong, Wang, Dongning, Rao, Yun-Jiang, Zhang, Yuting, Xu, Huaxing, Yang, Li

Année:

2013

Langue:

english

Fichier:

PDF, 403 KB

english, 2013

Ultralow reverse leakage current in AlGaN/GaN lateral Schottky barrier diodes grown on bulk GaN substrate

Lu, Xing, Liu, Chao, Jiang, Huaxing, Zou, Xinbo, Zhang, Anping, Lau, Kei May

Journal:

Applied Physics Express

Année:

2016

Langue:

english

Fichier:

PDF, 2.22 MB

english, 2016

Off-state drain leakage reduction by post metallization annealing for Al 2 O 3 /GaN/AlGaN/GaN MOSHEMTs on Si

Jiang, Huaxing, Lu, Xing, Liu, Chao, Li, Qiang, Lau, Kei May

Journal:

physica status solidi (a)

Année:

2015

Langue:

english

Fichier:

PDF, 1.12 MB

english, 2015

Coalescence of planar GaAs nanowires into strain-free three-dimensional crystals on exact (001) silicon

Li, Qiang, Jiang, Huaxing, Lau, Kei May

Journal:

Journal of Crystal Growth

Année:

2016

Langue:

english

Fichier:

PDF, 1.18 MB

english, 2016

[IEEE 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)] - Toyama, Japan (2016.6.26-2016.6.30)] 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) - Fabrication and improved performance of AlGaN/GaN HEMTs with regrown ohmic contacts and passivation-first process

Huang, Tongde, Liu, Chao, Bergsten, Johan, Jiang, Huaxing, Lau, Kei May, Rorsman, Niklas

Année:

2016

Langue:

english

Fichier:

PDF, 461 KB

english, 2016

[IEEE 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)] - Toyama, Japan (2016.6.26-2016.6.30)] 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) - Monolithically integrated GaN-based HEMT-LED and InGaN/GaN photodiodes for on-chip optical interconnects

Liu, Chao, Jiang, Huaxing, Cai, Yuefei, Lau, Kei May

Année:

2016

Langue:

english

Fichier:

PDF, 17 KB

english, 2016

as Gate Dielectric

Lu, Xing, Yu, Kun, Jiang, Huaxing, Zhang, Anping, Lau, Kei May

Journal:

Année:

2017

Langue:

english

Fichier:

PDF, 1.63 MB

english, 2017

Monolithic integration of enhancement-mode vertical driving transistorson a standard InGaN/GaN light emitting diode structure

Lu, Xing, Liu, Chao, Jiang, Huaxing, Zou, Xinbo, Zhang, Anping, Lau, Kei May

Journal:

Année:

2016

Langue:

english

Fichier:

PDF, 1.39 MB

english, 2016

SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs

Jiang, Huaxing, Liu, Chao, Chen, Yuying, Lu, Xing, Tang, Chak Wah, Lau, Kei May

Journal:

Année:

2017

Langue:

english

Fichier:

PDF, 2.34 MB

english, 2017

[IEEE 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)] - Toyama, Japan (2016.6.26-2016.6.30)] 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) - High voltage low current collapse AlGaN/GaN MISHEMTs with in-situ SiN gate dielectric

Jiang, Huaxing, Liu, Chao, Lu, Xing, Lau, Kei May

Année:

2016

Langue:

english

Fichier:

PDF, 742 KB

english, 2016

High Performance Monolithically Integrated GaN Driving VMOSFET on LED

LU, Xing, Liu, Chao, Jiang, Huaxing, Zou, Xinbo, Lau, Kei May

Journal:

IEEE Journal of Solid-State Circuits

Année:

2017

Langue:

english

Fichier:

PDF, 819 KB

english, 2017

An Auto-Zero-Voltage-Switching Quasi-Resonant LED Driver With GaN FETs and Fully Integrated LED Shunt Protectors

Li, Lisong, Gao, Yuan, Jiang, Huaxing, Mok, Philip K. T., Lau, Kei May

Journal:

Année:

2018

Langue:

english

Fichier:

PDF, 4.95 MB

english, 2018

A Novel 700 V Monolithically Integrated Si-GaN Cascoded Field Effect Transistor

Ren, Jie, Tang, Chak Wah, Feng, Hao, Jiang, Huaxing, Yang, Wentao, Zhou, Xianda, Lau, Kei May, Sin, Johnny K. O.

Journal:

Jiang, Huaxing, Tang, Chak Wah, Lau, Kei May

Année:

2018

Langue:

english

Fichier:

PDF, 682 KB

english, 2018

Enhancement-Mode GaN MOS-HEMTs With Recess-Free Barrier Engineering and High- ${k}$ ZrO2 Gate Dielectric

Journal:

IEEE Transactions on Systems, Man, and Cybernetics: Systems

Année:

2018

Langue:

english

Fichier:

PDF, 985 KB

english, 2018

An Operation-Group Based Soft Scheduling Approach for Uncertain Semiconductor Wafer Fabrication System

Zhong, Huaxing, Liu, Min, Hao, Jinghua, Jiang, Shenglong

Journal:

Année:

2017

Langue:

english

Fichier:

PDF, 1.63 MB

english, 2017

The Historical Speciation of Mauremys Sensu Lato: Ancestral Area Reconstruction and Interspecific Gene Flow Level Assessment Provide New Insights

Zhou, Huaxing, Jiang, Yuan, Nie, Liuwang, Yin, Huazong, Li, Haifeng, Dong, Xianmei, Zhao, Feifei, Zhang, Huanhuan, Pu, Youguang, Huang, Zhenfeng, Song, Jiaolian, Sun, Entao, Lötters, Stefan

Journal:

PLoS ONE

Année:

2015

Langue:

english

Fichier:

PDF, 782 KB

english, 2015

Pd-Catalyzed Direct C−H Functionalization/Annulation of BODIPYs with Alkynes to Access Unsymmetrical Benzo[b]-Fused BODIPYs: Discovery of Lysosome-Targeted Turn-On Fluorescent Probes

Yang, Xiuguang, Jiang, Linfeng, Yang, Mufan, Zhang, Huaxing, Lan, Jingbo, Zhou, Fulin, Chen, Xingyu, Wu, Di, You, Jingsong

Journal:

Journal of Organic Chemistry

Année:

2018

Langue:

english

Fichier:

PDF, 1.71 MB

english, 2018

Comparison of CMM and Micro-CT Volumetric Analysis of Polyethylene Tibial Knee Inserts in Total Knee Replacement

Jiang, Wei, Ji, Cuicui, Xiao, Huaxing, Jin, Zhongmin, Dai, Yuntian

Journal:

International Journal of Polymer Science

Année:

2018

Langue:

english

Fichier:

PDF, 3.36 MB

english, 2018

High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO₂ Gate Dielectric

Jiang, Huaxing, Liu, Chao, Ng, Kar Wei, Tang, Chak Wah, Lau, Kei May

Journal:

Année:

2018

Langue:

english

Fichier:

PDF, 1.93 MB

english, 2018

Enhancement of the red emission in Ba 3 (PO 4 ) 2 :Eu3+ by addition of charge compensator Na+

Zhang, Dandan, Xiao, Huaxing, Jiang, Wei, Cao, Xia, Huang, Lu, Liu, Gang, Ye, Manyu, Zhang, Zhiwei

Journal:

Modern Physics Letters B

Année:

2018

Langue:

english

Fichier:

PDF, 418 KB

english, 2018

Enhanced gate stack stability in GaN transistors with gate dielectric of bilayer SiN x by low pressure chemical vapor deposition

Huang, Tongde, Jiang, Huaxing, Bergsten, Johan, Lau, Kei May, Rorsman, Niklas

Journal:

Année:

2018

Langue:

english

Fichier:

PDF, 1.30 MB

english, 2018

High-Voltage p-GaN HEMTs with OFF-State Blocking Capability after Gate Breakdown

Jiang, Huaxing, Zhu, Renqiang, Lyu, Qifeng, Lau, Kei May

Journal: